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VLF to UHF

Improved InGaP/GaAs HBT technology facilitates high linearity PAs 
This article reports on the improvement in a recently developed InGaP/GaAs HBT for 24 V to 28 V linear PA operation. Key improvements include adjacent-channel leakage ratio under WCDMA modulation, ruggedness to sustain high VSWR, and reliability....
GaN HEMTs are ready for production 
High-performance RF power transistor supplier Nitronex announced at the WiMAX World that its GaN-on-silicon manufacturing process with 0.5 micron lithography...

Mixing RF, digital and analog circuits on the same PCB 
A dynamic link integrates the PCB schematic and layout tool with RF design and simulation tools, resulting in a solution that overcomes the shortcomings of the classic RF design...
Low power, giga speed programmable divider in 0.18 m CMOS 
This article will focus on the design and simulation of a new programmable divider architecture for use in the 2.412 GHz to 2.484 GHz frequency bands....

EMXOs boost oscillator performance with lower power consumption and reduced size 
Advances in the evacuated miniature crystal oscillator (EMXO) manufacturing process have enabled EMXOs to achieve performance comparable to oven-controlled oscillators with lower power consumption and lower cost. While describing the performance of EMXOs, this article discusses its benefits in satellite applications and provides a design example....
Direct digital synthesis enables digital PLLs 
Direct digital synthesis, together with a DAC and a high-performance digital phase detector, overcome several fundamental drawbacks in analog PLLs, such as asymmetry in the phase detector or bandwidth limitations and phase noise in the VCO. Furthermore, because the circuitry is digital, feedback-loop parameters are adjusted by changing numerical coefficients in device registers rather than changing electrical parameters in physical components, the latter process being especially difficult for ASIC designs....
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